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SKHI61 Datasheet(PDF) 1 Page - Semikron International

Part # SKHI61
Description  Sixpack IGBT and MOSFET Driver
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Manufacturer  SEMIKRON [Semikron International]
Direct Link  http://www.semikron.com
Logo SEMIKRON - Semikron International

SKHI61 Datasheet(HTML) 1 Page - Semikron International

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2
Driver Electronic – PCB mountable
11-11-2005
© by SEMIKRON
SKHI 61 ...
SEMIDRIVERTM
Sixpack IGBT and
MOSFET Driver
SKHI 61
Features
• CMOS-compatible input buffers
at VDD=5V
• Short-circuit protection by
VCE-monitoring and
Soft-turn-Off
• Drive interlock top/bottom
• Signal transmission by
opto-couplers
• Supply undervoltage
protection (13V)
• Error latch / output
Typical Applications
• Driver for IGBT and MOSFET
modules in three-phase-bridge
circuits, inverter drives,
UPS-facilities, etc.
1) At Ta < -25°C the current consumption
can be 1,6 times the rated maximum
current for the first three operating
minutes.
Absolute Maximum Ratings
Symbol
Conditions
Values
Units
VS
Supply voltage primary
15,6
V
ViH
Input signal voltage
VS + 0,3
V
IoutPEAK
Output peak current
2
A
IoutAVmax
Output average current (Ta = 85 °C)
20
mA
fmax
Max. switching frequency (CGE <
9nF)
50
kHz
VCE
Collector emitter voltage sense
across
900
V
the IGBT (for 1200V-IGBTs)
dv/dt
Rate of rise and fall of voltage
15
kV/µs
(secondary to primary side)
VisolIO
Isolation test voltage input - output
2500
V
(2 sec. AC)
Visol12
Isolation test voltage output 1 -
output 2
1500
V
(2 sec. AC)
RGonmin
Minimum rating of RGon
10
RGoffmin
Minimum rating for RGoff
10
Qout/pulse
Max. rating for gate Ta = 85 °C
0,7
µC
charge per pulse Ta = 55 °C
1
µC
Top
Operating temperature
- 40 ... + 85
°C
Tstg
Storage temperature
- 40 ... + 85
°C
Characteristics
Ta = 25°C, unless otherwise specified
Symbol
Conditions
min.
typ.
max. Units
VS
Supply voltage primary
14,4
15,0
15,6
V
ISO
1)
Supply current no load
160
200
mA
primary side normal op.
450
mA
ViT+
Input threshold voltage (High)
4,0
V
ViT-
Input threshold voltage (LOW)
1,5
V
Rin
Input resistance
60
k
VG(on)
Turn on gate voltage output
14,9
V
VG(off)
Turn off gate voltage output
-6,5
V
RGE
Internal gate-emitter resistance
20
k
fASIC
ASIC system switching frequency
8
MHz
td(on)IO
Input-output turn-on propagation time
0,3
0,45
0,6
µs
td(off)IO
Input-output turn-off propagation time
0,3
0,45
0,6
µs
td(err)
Error input-output propagation time
1,15
1,3
1,5
µs
tpERRRESET
Error memory reset time
7
15
27
µs
tTD
Interlock dead time adjustable
no
interl
ock
4,1
µs
VCEstat
Reference voltage for VCE-monitoring
5,8
V
tblank
Blanking time
3,5
µs
Cps
Coupling capacitance primary-secondary
40
pF
MTBF
Mean Time Between Failure Ta = 40°C
1
10 6 h
w
weight
95
g
H x B x T
Dimensions
20x57x
114
mm


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