Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
TLP4592G
|
217Kb / 6P |
The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.
|
QT Optoelectronics |
H24B1
|
68Kb / 1P |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR
|
KODENSHI_AUK CORP. |
PC-17K1C
|
218Kb / 3P |
Photocoupler(Photocoupler consists of a Gallium Arsenide Infrared Emitting)
|
PC-16T1
|
218Kb / 3P |
Photocoupler(Photocoupler consists of a Gallium Arsenide Infrared Emitting)
|
List of Unclassifed Man... |
CLED155
|
54Kb / 2P |
Gallium Aluminum Arsenide Infrared Emitting Diode
|
Everlight Electronics C... |
ITR8105
|
175Kb / 8P |
Gallium Arsenide Infrared Emitting Diode
|
ITR8010
|
253Kb / 8P |
GALLIUM ARSENIDE INFRARED EMITTING DIODE
|
ITR8117
|
241Kb / 8P |
Gallium arsenide infrared emitting diode
|
List of Unclassifed Man... |
ITR8102
|
206Kb / 8P |
gallium arsenide infrared emitting diode
|
Texas Instruments |
TIL119
|
226Kb / 6P |
[Old version datasheet] Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Darlinrton-Connected Phototransistor
|