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TESP5700 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. TESP5700
Description  Silicon PIN Photodiode
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TESP5700 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 81573
Rev. 1.4, 08-Mar-05
TESP5700
Vishay Semiconductors
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25
°C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward Voltage
IF = 50 mA
VF
0.9
1.3
V
Breakdown Voltage
IR = 100 µA, E = 0
V(BR)
60
V
Reverse Dark Current
VR = 10 V, E = 0
Iro
110
nA
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
17
pF
Serial Resistance
VR = 2 V, f = 1 MHz
RS
40
Open Circuit Voltage
Ee = 1 mW/cm
2,
λ = 870 nm
Vo
430
mV
Temp. Coefficient of Vo
Ee = 1 mW/cm
2,
λ = 870 nm
TKVo
- 2.6
mV/K
Short Circuit Current
Ee = 1 mW/cm
2,
λ = 870 nm
Ik
23
µA
Reverse Light Current
Ee = 1 mW/cm
2,
λ = 870 nm,
VR = 2 V
Ira
16
25
µA
Temp. Coefficient of Ira
Ee = 1 mW/cm
2,
λ = 870 nm,
VR = 2 V
TKIra
0.13
%/K
Absolute Spectral Sensitivity
VR = 2 V, λ = 870 nm
s(
λ)
0.57
A/W
VR = 5 V, λ = 950 nm
s(
λ)
0.37
A/W
Angle of Half Sensitivity
ϕ
± 60
deg
Wavelength of Peak Sensitivity
λ
p
870
nm
Range of Spectral Bandwidth
λ
0.5
790 to 980
nm
Rise Time
VR = 2 V, RL = 50 Ω, λ = 870 nm
tr
10
ns
Fall Time
VR = 2 V, RL = 50 Ω, λ = 870 nm
tf
10
ns
Cut-Off Frequency
VR = 2 V, RL = 50 Ω, λ = 870 nm
fc
35
MHz
Figure 1. Reverse Dark Current vs. Ambient Temperature
20
40
60
80
1
10
100
1000
Tamb – Ambient Temperature ( C )
100
16931
VR = 10 V
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
0.6
0.8
1.0
1.2
1.4
94 8409
VR = 5 V
λ =950nm
Tamb - Ambient Temperature (
°C)
100
80
60
40
20
0


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