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TC253SPD-B0 Datasheet(PDF) 9 Page - Texas Instruments |
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TC253SPD-B0 Datasheet(HTML) 9 Page - Texas Instruments |
9 / 23 page TC253SPDB0 680 × 500 PIXEL IMPACTRON CCD IMAGE SENSOR JULY 2003 − SOCS084 9 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating ranges of supply voltage at operating free-air temperature (unless otherwise noted) PARAMETER MIN TYP‡ MAX UNIT Charge multiplication gain 1 30 (100)§ Excess noise factor for typical CCM gain (see Note 6) 1 1.4 Dynamic range without CCM gain 64 dB Dynamic range with typical CCM gain (see Note 7) 66 dB Charge conversion gain without CCM gain (see Note 8) 9 µV/e- τ Signal-response delay time (see Note 9) 9 ns Output resistance 320 Ω Amplifier noise-equivalent signal without CCM gain† 29 e- rms Response linearity without CCM gain 1 Response linearity with typical CCM gain 1 Charge-transfer efficiency (see Note 10) 0.9998 0.9999 Supply current 2 3 4 mA IAG1 3 IAG2 3.2 IAG1-IAG2 2 nF SAG1 3 nF SAG2 3.6 Ci Input capacitance SAG1-SAG2 2.2 Ci Input capacitance SRG1 40 SRG2 40 SRG1−SRG2 50 pF CMG 30 pF CMG−SRG1 10 ODB 1,000 ADB high (see Note 11) 20 SRG−1,2 high (Note 11) 45 Pulse amplitude rejection ratio SRG−1,2 low (Note 11) 45 dB Pulse amplitude rejection ratio CMG high (see Note 11) 45 dB CMD low (see Note 11) 45 OBD low (see Note 11) 45 † The values in the table are quoted using CDS = correlated double sampling. CDS is a signal-processing technique that improves performance by minimizing undesirable effects of reset noise. ‡ All typical values are at TA = 25°C. § Maximum CCM gain is not ensured. NOTES: 6. Excess noise factor F is defined as the ratio of noise sigma after multiplication divided by M times the noise sigma before multiplication, where M is the charge multiplication gain. 7. Dynamic range is – 20 times the logarithm of the noise sigma divided by the saturation-output signal amplitude. 8. Charge-conversion factor is defined as the ratio of output signal to input number of electrons. 9. Signal-response delay time is the time between the falling edge of the SRG2 pulse and the output-signal valid state. 10. Charge transfer efficiency is one minus the charge loss per transfer in the CCD register. 11. Rejection ratio is – 20 times the logarithm of the output referenced to the reset level divided by the 1 V of amplitude change of the corresponding gate or terminal signal. |
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