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K4H1G0838M-LA2 Datasheet(PDF) 4 Page - Samsung semiconductor

Part # K4H1G0838M-LA2
Description  1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4H1G0838M-LA2 Datasheet(HTML) 4 Page - Samsung semiconductor

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DDR SDRAM
DDR SDRAM 1Gb M-die (x4, x8) Pb-Free
Revision 1.1 October, 2004
Pin Description
DM is internally loaded to match DQ and DQS identically.
1Gb TSOP-II Package Pinout
Row & Column address configuration
VDD
1
66Pin TSOPII
(400mil x 875mil)
DQ0
2
VDDQ
3
NC
4
DQ1
5
VSSQ
6
NC
7
DQ2
8
VDDQ
9
NC
10
DQ3
11
VSSQ
12
BA0
20
CS
19
RAS
18
CAS
17
WE
16
NC
15
VDDQ
14
NC
13
VDD
27
A3
26
A2
25
A1
24
A0
23
AP/A10
22
BA1
21
VSS
54
DQ7
53
VSSQ
52
NC
51
DQ6
50
VDDQ
49
NC
48
DQ5
47
VSSQ
46
NC
45
DQ4
44
VDDQ
43
A11
35
36
CKE
37
CK
38
DM
39
VREF
40
VSSQ
41
NC
42
VSS
55
A4
56
A5
57
A6
58
A7
59
A8
60
A9
34
(0.65mm Pin Pitch)
33
32
31
30
29
28
61
62
63
64
65
66
NC
NC
A13
NC
NC
VDD
NC
DQS
NC
VSS
CK
NC
A12
VSS
NC
VSSQ
NC
DQ3
VDDQ
NC
NC
VSSQ
NC
DQ2
VDDQ
A11
CKE
CK
DM
VREF
VSSQ
NC
VSS
A4
A5
A6
A7
A8
A9
NC
DQS
NC
VSS
CK
NC
A12
VDD
NC
VDDQ
NC
DQ0
VSSQ
NC
NC
VDDQ
NC
DQ1
VSSQ
BA0
CS
RAS
CAS
WE
NC
VDDQ
NC
VDD
A3
A2
A1
A0
AP/A10
BA1
NC
NC
A13
NC
NC
VDD
Bank Address
BA0~BA1
Auto Precharge
A10
Organization
Row Address
Column Address
256Mx4
A0~A13
A0-A9, A11, A12
128Mx8
A0~A13
A0-A9, A11
256Mb x 4
128Mb x 8


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