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AOH3106 Datasheet(PDF) 3 Page - VBsemi Electronics Co.,Ltd

Part No. AOH3106
Description  N-Channel 100-V (D-S) MOSFET
Download  6 Pages
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AOH3106 Datasheet(HTML) 3 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0
8
16
24
32
40
VGS = 4.5 V
ID - Drain Current (A)
VGS = 10 V
0
2
4
6
8
10
04
8
12
16
20
ID = 6.0 V
VDS = 30 V
Qg - Total Gate Charge (nC)
2.0
2.5
1
10
50
0.00
0.5
1.0
1.5
TJ = 25 °C
TJ = 175 °C
VSD - Source-to-Drain Voltage (V)
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
300
600
900
1200
1500
1800
2100
0
Crss
Coss
Ciss
VDS - Drain-to-Source Voltage (V)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50
- 25
0
25
50
75
100
125
150
175
VGS = 10 V
ID = 6.0 A
TJ - Junction Temperature (°C)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
02
4
6
8
10
ID = 6.0 A
VGS - Gate-to-Source Voltage (V)
15
30
45
60
75
90
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AOH3106
3


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