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AOH3106 Datasheet(PDF) 2 Page - VBsemi Electronics Co.,Ltd

Part No. AOH3106
Description  N-Channel 100-V (D-S) MOSFET
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AOH3106 Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
100
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
1
µA
VDS = 100 V, VGS = 0 V, TJ = 55 °C
20
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
40
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 6.0 A
Ω
VGS = 10 V, ID = 4.0 A, TJ = 125 °C
0.110
VGS = 10 V, ID = 4.0 A, TJ = 175 °C
0.140
VGS = 4.5 V, ID = 3.1 A
0.120
Forward Transconductancea
gfs
VDS = 15 V, ID = 4.0 A
25
S
Diode Forward Voltagea
VSD
IS = 1.7 A, VGS = 0 V
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = 50 V, VGS = 10 V, ID = 4.0 A
18
27
nC
Gate-Source Charge
Qgs
3.4
Gate-Drain Charge
Qgd
5.3
Gate Resistance
Rg
VGS = 0.1 V, f = 5 MHz
0.5
1.4
2.4
Ω
Turn-On Delay Time
td(on)
VDD = 50 V, RL = 30 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
10
20
ns
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
25
50
Fall Time
tf
12
24
Source-Drain Reverse Recovery Time
trr
IF = 1.7 A, dI/dt = 100 A/µs
50
80
Output Characteristics
0
8
16
24
32
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 10 V thru 5 V
4 V
2 V
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
0
8
16
24
32
40
0
1234
5
- 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)
TC = 150 °C
1.5
3
0.122
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AOH3106
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