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AS5C1008 Datasheet(PDF) 4 Page - Austin Semiconductor

Part No. AS5C1008
Description  128K x 8 SRAM RUGGEDIZED PLASTIC HIGH SPEED SRAM
Download  9 Pages
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Maker  AUSTIN [Austin Semiconductor]
Homepage  http://www.austinsemiconductor.com
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AS5C1008 Datasheet(HTML) 4 Page - Austin Semiconductor

   
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SRAM
AS5C1008
Austin Semiconductor, Inc.
AS5C1008
Rev. 3.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55oC<T
A
<+125oC or -40oC to +85oC; Vcc = 5V+10%)
DESCRIPTION
SYMBOL
1
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
READ CYCLE
Read Cycle Time
tRC
15
20
25
ns
Address Access Time
tAA
15
20
25
ns
Chip Enable Access Time
tACE
15
20
25
ns
Output Hold from Address Change
tOH
333
ns
Chip Enable to Output in Low-Z
tLZCE
333
ns
Chip Disable to Output in High-Z
tHZCE
78
10
ns
Output Enable Access Time
tAOE
77
10
ns
Output Enable to Output in Low-Z
tLZOE
000
ns
Output Disable to Output in High-Z
tHZOE
78
10
ns
WRITE CYCLE
Write Cycle Time
tWC
15
20
25
ns
Chip Enable to End of Write
tCW
12
15
20
ns
Address Valid to End of Write
tAW
12
15
20
ns
Address Set-up Time
tAS
000
ns
Address Hold from End of Write
tAH
000
ns
Write Pulse Width (OE\ > VIH)tWP
12
15
20
ns
Data Set-up Time
tDS
810
15
ns
Data Hold Time
tDH
000
ns
Write Disable to Output in Low-Z
tLZWE
555
ns
Write Enable to Output in High-Z
tHZWE
79
10
ns
-15
-20
-25
NOTE: 1. t
LZCE
, t
LZWE
, t
HZCE
, t
LZOE
, and t
HZOE
are simulated values.


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