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TPC8016-H Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part No. TPC8016-H
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TPC8016-H Datasheet(HTML) 5 Page - Toshiba Semiconductor

   
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TPC8016-H
2003-07-14
5
RDS (ON) – Ta
IDR – VDS
Capacitance – VDS
Vth – Ta
PD – Ta
Dynamic input/output characteristics
Ambient temperature
Ta
(°C)
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
Total gate charge Qg (nC)
0
0
0.4
0.8
1.2
1.6
2
50
100
150
200
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b )
t
= 10 s
(1)
(2)
0.1
1
10
0
−0.4
−0.6
−0.8
−1
−0.2
100
3
1
5
10
Common source
Ta
= 25°C
Pulse test
VGS = 0 V
−80
−40
0
40
80
160
120
0
1.5
2.5
0.5
2
1
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0.1
1
10
100
10
100
1000
10000
Crss
Coss
Ciss
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25°C
0
0
10
20
30
10
20
30
0
4
8
16
10
Common source
Ta
= 25°C
ID = 15 A
Pulse test
VGS
VDD = 24 V
40
50
60
6
2
VDS
40
6
12
12
14
VDD = 24 V
12
6
−80
−40
0
40
80
160
120
0
2
4
12
6
8
10
Common source
Pulse test
ID = 15, 7.5, 3.8 A
ID = 15, 7.5, 3.8 A
VGS = 4.5 V
10


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