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VVZB120 Datasheet(PDF) 2 Page - IXYS Corporation

Part No. VVZB120
Description  Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

VVZB120 Datasheet(HTML) 2 Page - IXYS Corporation

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© 2000 IXYS All rights reserved
2 - 3
VVZB 120
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
I
R, ID
V
R = VRRM/VDRM,
0.3
mA
V
R = VRRM/VDRM, TVJ = 150°C
5
mA
V
F, VT
I
F = 100 A,
1.47
V
V
T0
For power-loss calculations only
0.85
V
r
T
T
VJ = 150°C
5 m
W
V
GT
V
D
= 6 V;
T
VJ =
25°C
1.5
V
T
VJ = -40°C
1.6
V
I
GT
V
D
= 6 V;
T
VJ =
25°C
100
mA
T
VJ = -40°C
200
mA
V
GD
T
VJ
= T
VJM;VD =
2/
3 VDRM
0.2
V
I
GD
T
VJ
= T
VJM;VD =
2/
3 VDRM
10
mA
I
L
V
D = 6 V; tG = 30 µs
450
mA
di
G/dt = 0.45 A/µs; IG = 0.45 A
I
H
T
VJ
= T
VJM; VD = 6 V; RGK =
¥
200
mA
t
gd
V
D = ½ VDRM
2µs
di
G/dt = 0.45 A/µs; IG = 0.45 A
t
q
T
VJ = TVJM; VR = 100 V; VD =
2/
3 VDRM; tP = 200 µs
150
µs
dv/dt = 10 V/µs; I
T = 120 A; -di/dt = 10 A/µs
Q
S
T
VJ = TVJM
90
µC
I
RM
-di/dt = 0.64 A/µs; I
T/IF = 50 A
11
A
R
thJC
per thyristor / diode; sine 120° el.
1 K/W
R
thJH
per thyristor / diode; sine 120° el.
1.3 K/W
V
BR(CES)
V
GS = 0 V, IC = 1 mA
1200
V
V
GE(th)
I
C = 10 mA
5
8
V
I
GES
V
GE
=
± 20 V
500
nA
I
CES
V
CE = 0.8 VCES
0.5
mA
V
CE = 0.8 VCES,TVJ = 150°C
3
mA
V
CEsat
V
GE = 15 V, IC = 50 A
3.35
V
t
SC
V
GE = 15 V, VCE = 0.6 VCES, TVJ = 125°C,
10
µs
(SCSOA)
R
G = 11
W, non repetitive
RBSOA
V
GE = 15 V, VCE = 0.8 VCES, TVJ = 125°C,
100
A
R
G = 11
W, Clamped Inductive load, L = 100 µH
C
ies
V
CE = 25 V, f = 1 MHz, VGE = 0 V
9
nF
t
d(on)
65
ns
t
d(off)
200
ns
t
ri
tbd
ns
t
fi
tbd
ns
E
on
4.1
mJ
E
off
5.7
mJ
R
thJC
0.32 K/W
R
thJH
0.45 K/W
V
CE = 0.6 VCES, IC = 25 A
V
GE = 15 V, RG = 11 W
Inductive load; L = 100 µH
T
VJ = 125°C


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