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MEA95-06DA Datasheet(PDF) 1 Page - IXYS Corporation

Part No. MEA95-06DA
Description  Fast Recovery Epitaxial Diode (FRED) Module
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

MEA95-06DA Datasheet(HTML) 1 Page - IXYS Corporation

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© 2000 IXYS All rights reserved
1 - 2
75
142
75
95
TBD
Fast Recovery
Epitaxial Diode
(FRED) Module
Dimensions in mm (1 mm = 0.0394")
Features
q
International standard package
with DCB ceramic base plate
q
Planar passivated chips
q
Short recovery time
q
Low switching losses
q
Soft recovery behaviour
q
Isolation voltage 3600 V~
q
UL registered E 72873
Applications
q
Antiparallel diode for high frequency
switching devices
q
Free wheeling diode in converters
and motor control circuits
q
Inductive heating and melting
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
High reliability circuit operation
q
Low voltage peaks for reduced
protection circuits
q
Low noise switching
q
Low losses
x I
FAV rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
90
-40...+150
-40...+125
110
3000
3600
12.7
9.6
50
280
2.5-4/22-35
2.5-4/22-35
1.01
2.85
0.550
0.450
2
0.5
34
100
1.36
1.55
300
2.05
2.09
100
250
300
300
14
200
21
1200
1300
1080
1170
7200
7100
5800
5700
12
3
1
2
3
1
2
3
V
RSM
V
RRM
Type
V
V
MEA95-06 DA
MEK 95-06 DA
MEE 95-06 DA
600
600
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
case =
°CA
I
FAV
ÿÿx
T
case =
°C; rectangular, d = 0.5
A
I
FRM
t
P < 10
ms; rep. rating, pulse width limited by T
VJM
A
I
FSM
T
VJ = 45
°C;
t = 10 ms (50 Hz), sine
A
t = 8.3 ms (60 Hz), sine
A
T
VJ = 150
°C; t = 10 ms (50 Hz), sine
A
t = 8.3 ms (60 Hz), sine
A
I2t
T
VJ = 45
°C;
t = 10 ms (50 Hz), sine
A2s
t = 8.3 ms (60 Hz), sine
A2s
T
VJ = 150
°C; t = 10 ms (50 Hz), sine
A2s
t = 8.3 ms (60 Hz), sine
A2s
T
VJ
°C
T
stg
°C
T
Hmax
°C
P
tot
T
case = 25
°CW
V
ISOL
50/60 Hz, RMS t = 1 min
V~
I
ISOL
£ 1 mA
t = 1 s
V~
M
d
Mounting torque (M5)
Nm/lb.in.
Terminal connection torque (M5)
Nm/lb.in.
d
S
Creep distance on surface
mm
d
A
Strike distance through air
mm
a
Maximum allowable acceleration
m/s2
Weight
g
Symbol
Test Conditions
Characteristic Values (per diode)
typ.
max.
I
R
T
VJ = 25
°CV
R
= V
RRM
mA
T
VJ = 25
°CV
R
= 0.8 • V
RRM
mA
T
VJ = 125
°CV
R
= 0.8 • V
RRM
mA
V
F
I
F
=
A;
T
VJ = 125
°CV
T
VJ =25
°CV
I
F
=
A;
T
VJ = 125
°CV
T
VJ =25
°CV
V
T0
For power-loss calculations only
V
r
T
T
VJ = 125°C
m
W
R
thJH
DC current
K/W
R
thJC
DC current
K/W
t
rr
I
F
=A
T
VJ = 100
°Cns
I
RM
V
R
=V
T
VJ =
25
°CA
-di/dt =
A/
msT
VJ = 100
°CA
TO-240 AA
1
2
3
MEA 95-06 DA
MEK 95-06 DA
MEE 95-06 DA
V
RRM = 600 V
I
FAV
= 95 A
t
rr
= 250 ns


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