IXTH20N60 datasheet(3/4 Pages) IXYS

Part #	IXTH20N60

Description	MegaMOS FET

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Manufacturer	IXYS [IXYS Corporation]

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IXTH 20N60

IXTM 20N60

T

J - Degrees C

-50

-25

0

25

50

75

100 125 150

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

T

C - Degrees C

-50

-25

0

25

50

75

100 125 150

0

5

10

15

20

25

30

35

15N60

T

J - Degrees C

-50

-25

0

25

50

75

100 125 150

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

I

D - Amperes

0

5

10

15

20

25

30

35

40

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

V

GS = 10V

V

GS - Volts

01

2

345

67

89

10

0

10

20

30

40

V

DS - Volts

0

5

10

15

20

0

10

20

30

40

V

GS(th)

20N60

I

D = 10A

V

GS = 15V

V

GS = 10V

BV

DSS

6V

5V

T

J = 25°C

T

J = 25°C

T

J = 25°C

Fig. 1 Output Characteristics

Fig. 2 Input Admittance

Fig. 3 R

DS(on) vs. Drain Current

Fig. 4 Temperature Dependence

of Drain to Source Resistance

Fig. 5 Drain Current vs.

Fig. 6 Temperature Dependence of

Case Temperature

Breakdown and Threshold Voltage

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IXTH20N60 Datasheet(PDF) 3 Page - IXYS Corporation

IXTH20N60 Datasheet(HTML) 3 Page - IXYS Corporation

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