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AS7C1025A Datasheet(PDF) 2 Page - Alliance Semiconductor Corporation

Part No. AS7C1025A
Description  5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)
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Maker  ALSC [Alliance Semiconductor Corporation]
Homepage  http://www.alsc.com
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AS7C1025A Datasheet(HTML) 2 Page - Alliance Semiconductor Corporation

   
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®
AS7C1025A
AS7C31025A
2/6/01; V.0.9
Alliance Semiconductor
P. 2 of 8
Functional description
The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as
131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 3/3/4/5 ns are ideal for
high-performance applications. The chip enable input CE permits easy memory and expansion with multiple-bank memory systems.
When CE is high the devices enter standby mode. The standard AS7C1025A is guaranteed not to exceed 55 mW power consumption in
standby mode. Both devices also offer 2.0V data retention.
A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0-I/O7 is written on the rising
edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been
disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chips drive I/O pins
with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output
drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5V supply (AS7C1025A) or 3.3V supply (AS7C31025A). The
AS7C1025A and AS7C31025A are packaged in common industry standard packages.
Absolute maximum ratings
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Truth table
Key: X = Don’t Care, L = Low, H = High
Parameter
Device
Symbol
Min
Max
Unit
Voltage on VCC relative to GND
AS7C1025A
Vt1
–0.50
+7.0
V
AS7C31025A
Vt1
–0.50
+5.0
V
Voltage on any pin relative to GND
Vt2
–0.50
VCC + 0.5
V
Power dissipation
PD
–1.0
W
Storage temperature (plastic)
Tstg
–65
+150
oC
Ambient temperature with VCC applied
Tbias
–55
+125
oC
DC current into outputs (low)
IOUT
–20
mA
CE
WE
OE
Data
Mode
H
X
X
High Z
Standby (ISB, ISB1)
L
H
H
High Z
Output disable (ICC)
LH
L
DOUT
Read (ICC)
LL
X
DIN
Write (ICC)


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