IXSH35N120A datasheet(2/4 Pages) IXYS

Part #	IXSH35N120A

Description	High Voltage, High speed IGBT

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

g

fs

I

C

= I

C90; VCE = 10 V,

20

26

S

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

I

C(on)

V

GE = 15 V, VCE = 10 V

170

A

C

ies

3750

pF

C

oes

V

CE = 25 V, VGE = 0 V, f = 1 MHz

235

pF

C

res

60

pF

Q

g

150

190

nC

Q

ge

I

C = IC90, VGE = 15 V, VCE = 0.5 VCES

40

60

nC

Q

gc

70

100

nC

t

d(on)

80

ns

t

ri

150

ns

t

d(off)

400

900

ns

t

fi

500

700

ns

E

off

10

mJ

t

d(on)

80

ns

t

ri

150

ns

E

on

2.5

mJ

t

d(off)

400

ns

t

fi

700

ns

E

off

15

mJ

R

thJC

0.42 K/W

R

thCK

0.25

K/W

Inductive load, T

J = 25°C

I

C = IC90, VGE = 15 V, L = 100 mH

V

CE = 0.8 VCES, RG = 2.7 W

Remarks: Switching times may

increase for V

CE (Clamp) > 0.8 • VCES,

higher T

J or increased RG

Inductive load, T

J = 125°C

I

C = IC90, VGE = 15 V, L = 100 mH

V

CE = 0.8 VCES, RG = 2.7 W

Remarks: Switching times may

increase for V

CE (Clamp) > 0.8 • VCES,

higher T

J or increased RG

IXSH 35N120A

TO-247 AD (IXSH) Outline

Dim. Millimeter

Inches

Min.

Max.

Min.

Max.

A

19.81 20.32

0.780 0.800

B

20.80 21.46

0.819 0.845

C

15.75 16.26

0.610 0.640

D

3.55

3.65

0.140 0.144

E

4.32

5.49

0.170 0.216

F

5.4

6.2

0.212 0.244

G

1.65

2.13

0.065 0.084

H

-

4.5

-

0.177

J

1.0

1.4

0.040 0.055

K

10.8

11.0

0.426 0.433

L

4.7

5.3

0.185 0.209

M

0.4

0.8

0.016 0.031

N

1.5

2.49

0.087 0.102

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

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