IXGN50N60BD3 datasheet(2/5 Pages) IXYS

Part #	IXGN50N60BD3

Description	HiPerFAST IGBT with HiPerFRED

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

g

fs

I

C

= I

C90; VCE = 10 V,

35

50

S

Pulse test, t

£ 300 ms, duty cycle £ 2 %

C

ies

4100

pF

C

oes

V

CE = 25 V, VGE = 0 V, f = 1 MHz

290

pF

C

res

50

pF

Q

g

110

nC

Q

ge

I

C = IC90, VGE = 15 V, VCE = 0.5 VCES

30

nC

Q

gc

35

nC

t

d(on)

50

ns

t

ri

50

ns

t

d(off)

110

250

ns

t

fi

150

220

ns

E

off

3.0

4.0

mJ

t

d(on)

50

ns

t

ri

60

ns

E

on

3.0

mJ

t

d(off)

200

ns

t

fi

250

ns

E

off

4.2

mJ

R

thJC

0.50 K/W

R

thCK

0.05

K/W

Inductive load, T

J = 25°C

I

C = IC90, VGE = 15 V, L = 100 mH,

V

CE = 0.8 VCES, RG = Roff = 2.7 W

Remarks: Switching times may increase

for V

CE (Clamp) > 0.8 • VCES, higher TJ or

increased R

G

Inductive load, T

J = 125°C

I

C = IC90, VGE = 15 V, L = 100 mH

V

CE = 0.8 VCES, RG = Roff = 2.7 W

Remarks: Switching times may increase

for V

CE (Clamp) > 0.8 • VCES, higher TJ or

increased R

G

Reverse Diode (FRED)

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

typ.

max.

I

R

T

VJ = 25°C VR= VRRM

650

uA

T

VJ = 150°C

2.5

mA

V

F

I

F

= 60 A, T

VJ = 150°C

1.75

V

Pulse test, t

£ 300 ms, duty cycle d £ 2 % T

VJ = 25°C

2.40

V

I

RM

I

F

= I

C90, VGE = 0 V, -diF/dt = 100 A/ms

8.0

A

V

R = 540 V

t

rr

I

F

= 1 A, -di/dt = 50 A/

ms, V

R = 30 V

T

J =

25

°C35

ns

R

thJC

0.85 K/W

IXGN 50N60BD2

IXGN 50N60BD3

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

31.50

31.88

1.240

1.255

B

7.80

8.20

0.307

0.323

C

4.09

4.29

0.161

0.169

D

4.09

4.29

0.161

0.169

E

4.09

4.29

0.161

0.169

F

14.91

15.11

0.587

0.595

G

30.12

30.30

1.186

1.193

H

38.00

38.23

1.496

1.505

J

11.68

12.22

0.460

0.481

K

8.92

9.60

0.351

0.378

L

0.76

0.84

0.030

0.033

M

12.60

12.85

0.496

0.506

N

25.15

25.42

0.990

1.001

O

1.98

2.13

0.078

0.084

P

4.95

5.97

0.195

0.235

Q

26.54

26.90

1.045

1.059

R

3.94

4.42

0.155

0.174

S

4.72

4.85

0.186

0.191

T

24.59

25.07

0.968

0.987

U

-0.05

0.1

-0.002

0.004

miniBLOC, SOT-227 B

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

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IXGN50N60BD3 Datasheet(PDF) 2 Page - IXYS Corporation

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