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IXGJ50N60B Datasheet(PDF) 4 Page - IXYS Corporation |
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IXGJ50N60B Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 4 page IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXGH 50N60B IXGK 50N60B IXGJ 50N60B IXGT 50N60B R G - Ohms 0 1020304050 60 0 2 4 6 8 10 12 0 1 2 3 4 5 6 Pulse Width - Seconds 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 D=0.02 V CE - Volts 0 100 200 300 400 500 600 0.1 1 10 100 Q g - nanocoulombs 0 40 80 120 160 200 0 4 8 12 16 I C - Amperes 0 20406080 100 0 2 4 6 8 10 12 0 1 2 3 4 5 6 V CE = 250V I C = 25A E (ON) E (OFF) E (ON) E (OFF) T J = 125°C R G = 6.2 Ω dV/dt < 5V/ns D=0.1 D=0.05 Single pulse D = Duty Cycle T J = 125°C 600 E (OFF) D=0.2 D=0.5 D=0.01 R G = 4.7Ω I C =25A T J = 125°C I C = 100A I C = 50A E (ON) E (ON) E (OFF) Figure 7. Dependence of E ON and EOFF on IC Figure 8. Dependence of E ON and EOFF on RG Figure 9. Gate Charge Figure 10. Turn-off Safe Operating Area Figure 11. IGBT Transient Thermal Resistance |
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