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IXGJ50N60B Datasheet(PDF) 4 Page - IXYS Corporation

Part # IXGJ50N60B
Description  HiPerFAST IGBT
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGJ50N60B Datasheet(HTML) 4 Page - IXYS Corporation

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IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXGH 50N60B IXGK 50N60B
IXGJ 50N60B IXGT 50N60B
R
G - Ohms
0
1020304050
60
0
2
4
6
8
10
12
0
1
2
3
4
5
6
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
D=0.02
V
CE - Volts
0
100
200
300
400
500
600
0.1
1
10
100
Q
g - nanocoulombs
0
40
80
120
160
200
0
4
8
12
16
I
C - Amperes
0
20406080
100
0
2
4
6
8
10
12
0
1
2
3
4
5
6
V
CE = 250V
I
C = 25A
E
(ON)
E
(OFF)
E
(ON)
E
(OFF)
T
J = 125°C
R
G = 6.2 Ω
dV/dt < 5V/ns
D=0.1
D=0.05
Single pulse
D = Duty Cycle
T
J = 125°C
600
E
(OFF)
D=0.2
D=0.5
D=0.01
R
G = 4.7Ω
I
C =25A
T
J = 125°C
I
C = 100A
I
C = 50A
E
(ON)
E
(ON)
E
(OFF)
Figure 7. Dependence of E
ON and EOFF on IC
Figure 8. Dependence of E
ON and EOFF on RG
Figure 9. Gate Charge
Figure 10. Turn-off Safe Operating Area
Figure 11. IGBT Transient Thermal Resistance


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