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IXGH50N60AS Datasheet(PDF) 4 Page - IXYS Corporation |
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IXGH50N60AS Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 4 page IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXGH50N60A IXGH50N60AS V CE - Volts 0 5 10 15 20 25 0 500 1000 1500 2000 2500 3000 3500 4000 4500 C ies C res C oes V CE - Volts 0 100 200 300 400 500 600 700 0.01 0.1 1 10 100 T J = 125°C dV/dt < 3V/ns Total Gate Charge - (nC) 0 50 100 150 200 250 0 3 6 9 12 15 Pulse Width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 D = Duty Cycle Single Pulse D=0.5 D=0.2 I C = 40A V CE = 500V D=0.1 D=0.05 D=0.02 D=0.01 G50N60 2 JNB Fig.10 Transient Thermal Impedance Fig.9 Capacitance Curves Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area |
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