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IXGH32N50BU1 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXGH32N50BU1 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page © 1997 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V CES T J = 25 °C to 150°C 500 V V CGR T J = 25 °C to 150°C; R GE = 1 MΩ 500 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25 °C60 A I C90 T C = 90 °C32 A I CM T C = 25 °C, 1 ms 120 A SSOA V GE = 15 V, T VJ = 125°C, RG = 33 Ω I CM = 64 A (RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V CES P C T C = 25 °C 200 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C Maximum Lead and Tab temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s M d Mounting torque, TO-247 AD 1.13/10 Nm/lb.in. Weight TO-247 SMD 4 g TO-247 AD 6 g Preliminary Data Sheet HiPerFASTTM IGBT with Diode Combi Pack V CES = 500 V I C25 = 60 A V CE(sat) = 2.0 V t fi = 80 ns IXGH32N50BU1 IXGH32N50BU1S Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. BV CES I C = 750 µA, V GE = 0 V 500 V V GE(th) I C = 250 µA, V CE = VGE 2.5 5.5 V I CES V CE = 0.8 • V CES T J = 25°C 500 µA V GE = 0 V T J = 125°C8 mA I GES V CE = 0 V, V GE = ±20 V ±100 nA V CE(sat) I C = I C90, VGE = 15 V 2.0 V E TO-247 SMD (32N50BU1S) G C (TAB) C (TAB) G = Gate, C = Collector, E = Emitter, TAB = Collector G C E TO-247 AD Features l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l High frequency IGBT and antiparallel FRED in one package l High current handling capability l Newest generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switched-mode and resonant-mode power supplies Advantages l Space savings (two devices in one package) l High power density l Very fast switching speeds for high frequency applications 95565A (4/97) |
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