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TB62732FU Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TB62732FU Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 15 page TOSHIBA T B 6 2 7 3 2 F U 27, Feb 2002 (Ver.04) Characteristics Symbol Test condition min typ max Unit Supply voltage Vcc 3.0 - 5.5 V Operation supply current Icc(On) Vcc = 3.6V - 0.9 mA Stand-by supply current Icc(SHDN) SHDN = 0 V - 0.5 1.2 uA SHDN terminal current I_SHDN SHDN = Vcc, built in pull-down resisance - 4.2 7 uA MOS-Tr on resistance Ron Io(A) <= 380 mA, detection resistance value is contained. - 2.0 2.5 ohms MOS-Tr switching frequency fOSC 0.7 1.0 1.3 MHz A terminal voltage Vo(A) 17 - - V A terminal current Io(A) 320 350 380 mA A terminal leakage current Ioz(A) - 0.5 1 uA Set up LED current (mean) Io Vcc = 3 - 4.3V, R_sens = 2.7 ohms, 19.6 mA LED current Vcc dependence dIo L = 6.8uH, Topr = 25 degree (Note 4) +/-5 +/-10 % Derating start ambient temperature Tdel R_sens = 2.7 ohms, L = 10uH, Vo = 16V (Note 5) - 45 - degr ee ELECTRIC CHARACTERISTICS ( unless otherwised notice, Topr = -40 to 85 degree & Vcc = 3.0 to 5.5 V) Note 4 : The derating function carries out the measurement in Ta= 25 degree not to work. The specifications don't contain the dispersion of the R_Sens resistor. Io has the possibility to be different from the specifications by the inductance value and the relations of the load. Note 5 : It is a specifications guarantee by the design. 4 |
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