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IXGH24N60BU1 Datasheet(PDF) 4 Page - IXYS Corporation |
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IXGH24N60BU1 Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 6 page IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXGH 24N60BU1 Pulse Width - Seconds 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 D=0.2 V CE - Volts 0 100 200 300 400 500 600 0.1 1 10 100 Q g - nanocoulombs 0 2040 6080 100 0 3 6 9 12 15 R G - Ohms 0 10 203040 50 0.0 0.5 1.0 1.5 2.0 2.5 T J = 125°C I C - Amperes 0 10 203040 50 0.0 0.5 1.0 1.5 2.0 2.5 V CE = 300V I C = 24A I C = 24A E (ON) E (OFF) E (ON) E (OFF) T J = 125°C R G = 10Ω dV/dt < 5V/ns D=0.5 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse D = Duty Cycle R G = 10Ω T J = 125°C Fig. 11. Transient Thermal Resistance Fig. 10. Turn-off Safe Operating Area Fig. 9. Gate Charge Fig. 7. Dependence of tfi and E OFF on IC. Fig. 8. Dependence of tfi and E OFF on RG. |
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