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IXGH22N50BS Datasheet(PDF) 2 Page - IXYS Corporation |
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IXGH22N50BS Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 2 page IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXGH22N50B IXGH22N50B IXGH22N50B IXGH22N50B IXGH22N50B IXGH22N50BS IXGH22N50BS IXGH22N50BS IXGH22N50BS IXGH22N50BS Symbol Symbol Symbol Symbol Symbol Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions Characteristic Values Characteristic Values Characteristic Values Characteristic Values Characteristic Values (T J = 25°C, unless otherwise specified) min. min. min. min. min. typ. typ. typ. typ. typ. max. max. max. max. max. g g g g g fs fs fs fs fs I C = I C90; VCE = 10 V, 9 16 S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % C C C C C ies ies ies ies ies 1450 pF C C C C C oes oes oes oes oes V CE = 25 V, VGE = 0 V, f = 1 MHz 120 pF C C C C C res res res res res 37 pF Q Q Q Q Q g g g g g 90 nC Q Q Q Q Q ge ge ge ge ge I C = IC90, VGE = 15 V, VCE = 0.5 VCES 11 nC Q Q Q Q Q gc gc gc gc gc 30 nC ttttt d(on) d(on) d(on) d(on) d(on) 15 ns ttttt ri ri ri ri ri 30 ns E E E E E on on on on on 0.15 mJ ttttt d(off) d(off) d(off) d(off) d(off) 100 150 ns ttttt fi fi fi fi fi 55 110 ns E E E E E off off off off off 0.3 0.5 mJ ttttt d(on) d(on) d(on) d(on) d(on) 15 ns ttttt ri ri ri ri ri 30 ns E E E E E on on on on on 0.15 mJ ttttt d(off) d(off) d(off) d(off) d(off) 140 ns ttttt fi fi fi fi fi 100 ns E E E E E off off off off off 0.6 mJ R R R R R thJC thJC thJC thJC thJC 0.83 K/W R R R R R thCK thCK thCK thCK thCK 0.25 K/W Inductive load, T Inductive load, T Inductive load, T Inductive load, T Inductive load, T J J J J J = 25 = 25 = 25 = 25 = 25 °°°°°C C C C C I C = IC90, VGE = 15 V, L = 100 µH, V CE = 0.8 VCES, RG = Roff = 10 Ω Inductive load, T Inductive load, T Inductive load, T Inductive load, T Inductive load, T J J J J J = 125 = 125 = 125 = 125 = 125 °°°°°C C C C C I C = IC90, VGE = 15 V, L = 100 µH V CE = 0.8 VCES, RG = Roff = 10 Ω Note 1 Note 1: Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher TJ or increased R G Note 1 Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC e ∅ P TO-247 AD Outline 1. Gate 2. Collector 3. Emitter 4. Collector Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A1 2.29 2.54 .090 .100 A2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b1 1.91 2.13 .075 .084 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 4.90 5.10 .193 .201 L1 2.70 2.90 .106 .114 L2 2.10 2.30 .083 .091 L3 0.00 0.10 .00 .004 L4 1.90 2.10 .075 .083 ØP 3.55 3.65 .140 .144 Q 5.59 6.20 .220 .244 R 4.32 4.83 .170 .190 S 6.15 BSC .242 BSC TO-247 SMD Outline Min. Recommended Footprint (Dimensions in inches and mm) |
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