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IXGH22N50BS Datasheet(PDF) 2 Page - IXYS Corporation

Part # IXGH22N50BS
Description  HiPerFAST IGBT
Download  2 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGH22N50BS Datasheet(HTML) 2 Page - IXYS Corporation

  IXGH22N50BS Datasheet HTML 1Page - IXYS Corporation IXGH22N50BS Datasheet HTML 2Page - IXYS Corporation  
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH22N50B
IXGH22N50B
IXGH22N50B
IXGH22N50B
IXGH22N50B
IXGH22N50BS
IXGH22N50BS
IXGH22N50BS
IXGH22N50BS
IXGH22N50BS
Symbol
Symbol
Symbol
Symbol
Symbol
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Characteristic Values
Characteristic Values
Characteristic Values
Characteristic Values
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
min.
min.
min.
min.
typ.
typ.
typ.
typ.
typ.
max.
max.
max.
max.
max.
g
g
g
g
g
fs
fs
fs
fs
fs
I
C
= I
C90; VCE = 10 V,
9
16
S
Pulse test, t
≤ 300 µs, duty cycle ≤ 2 %
C
C
C
C
C
ies
ies
ies
ies
ies
1450
pF
C
C
C
C
C
oes
oes
oes
oes
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
120
pF
C
C
C
C
C
res
res
res
res
res
37
pF
Q
Q
Q
Q
Q
g
g
g
g
g
90
nC
Q
Q
Q
Q
Q
ge
ge
ge
ge
ge
I
C = IC90, VGE = 15 V, VCE = 0.5 VCES
11
nC
Q
Q
Q
Q
Q
gc
gc
gc
gc
gc
30
nC
ttttt
d(on)
d(on)
d(on)
d(on)
d(on)
15
ns
ttttt
ri
ri
ri
ri
ri
30
ns
E
E
E
E
E
on
on
on
on
on
0.15
mJ
ttttt
d(off)
d(off)
d(off)
d(off)
d(off)
100
150
ns
ttttt
fi
fi
fi
fi
fi
55
110
ns
E
E
E
E
E
off
off
off
off
off
0.3
0.5
mJ
ttttt
d(on)
d(on)
d(on)
d(on)
d(on)
15
ns
ttttt
ri
ri
ri
ri
ri
30
ns
E
E
E
E
E
on
on
on
on
on
0.15
mJ
ttttt
d(off)
d(off)
d(off)
d(off)
d(off)
140
ns
ttttt
fi
fi
fi
fi
fi
100
ns
E
E
E
E
E
off
off
off
off
off
0.6
mJ
R
R
R
R
R
thJC
thJC
thJC
thJC
thJC
0.83 K/W
R
R
R
R
R
thCK
thCK
thCK
thCK
thCK
0.25
K/W
Inductive load, T
Inductive load, T
Inductive load, T
Inductive load, T
Inductive load, T
J
J
J
J
J = 25
= 25
= 25
= 25
= 25
°°°°°C
C
C
C
C
I
C = IC90, VGE = 15 V, L = 100 µH,
V
CE = 0.8 VCES, RG = Roff = 10 Ω
Inductive load, T
Inductive load, T
Inductive load, T
Inductive load, T
Inductive load, T
J
J
J
J
J = 125
= 125
= 125
= 125
= 125
°°°°°C
C
C
C
C
I
C = IC90, VGE = 15 V, L = 100 µH
V
CE = 0.8 VCES, RG = Roff = 10 Ω
Note 1
Note 1: Switching times may increase for V
CE (Clamp) > 0.8 • VCES, higher TJ or
increased R
G
Note 1
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
∅P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
∅ P
TO-247 AD Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.83
5.21
.190
.205
A1
2.29
2.54
.090
.100
A2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b1
1.91
2.13
.075
.084
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45
BSC
.215
BSC
L
4.90
5.10
.193
.201
L1
2.70
2.90
.106
.114
L2
2.10
2.30
.083
.091
L3
0.00
0.10
.00
.004
L4
1.90
2.10
.075
.083
ØP
3.55
3.65
.140
.144
Q
5.59
6.20
.220
.244
R
4.32
4.83
.170
.190
S
6.15
BSC
.242
BSC
TO-247 SMD Outline
Min. Recommended Footprint (Dimensions in inches and mm)


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