1 - 2

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

IXFH/ IXFT

IXFK

V

DSS

T

J

= 25

°C to 150°C

600

600

V

V

DGR

T

J

= 25

°C to 150°C; R

600

600

V

V

GS

Continuous

±20

±20

V

V

GSM

Transient

±30

±30

V

I

D25

T

C

= 25

°C, Chip capability

26

28

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

104

112

A

I

AR

T

C

= 25

°C26

28

A

E

AR

T

C

= 25

°C50

50

mJ

E

AS

T

C

= 25

°C

1.5

1.5

J

dv/dt

I

S

£ I

5

5

V/ns

T

P

D

T

C

= 25

°C

360

416

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

300

°C

M

d

Mounting torque

1.13/10

0.9/6

Nm/lb.in.

Weight

610

g

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

600

V

V

GS(th)

V

DS

= V

2

4.5

V

I

GSS

V

±200 nA

I

DSS

V

DS

= 0.8 • V

DSS

T

mA

V

T

mA

R

DS(on)

V

0.25

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

G = Gate

S = Source

TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

98511B (7/00)

V

DSS

I

D25

R

DS(on)

IXFH 26N60/IXFT 26N60

600 V

26 A

0.25

W

IXFK 28N60

600 V

28 A

0.25

W

t

TO-247 AD (IXFH)

(TAB)

TO-268 (D3) ( IXFT)

(TAB)

G

S

TO-264 AA (IXFK)

S

G

D

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

Features

• International standard packages

• Epoxy meetUL94V-0, flammability

classification

• Low R

• Rugged polysilicon gate cell structure

• Avalanche energy and current rated

• Fast intrinsic Rectifier

Advantages

• Easy to mount

• Space savings

• High power density

Preliminary data