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IXFK55N50 Datasheet(PDF) 2 Page - IXYS Corporation

Part No. IXFK55N50
Description  HiPerFET Power MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFK55N50 Datasheet(HTML) 2 Page - IXYS Corporation

  IXFK55N50 Datasheet HTML 1Page - IXYS Corporation IXFK55N50 Datasheet HTML 2Page - IXYS Corporation IXFK55N50 Datasheet HTML 3Page - IXYS Corporation IXFK55N50 Datasheet HTML 4Page - IXYS Corporation  
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Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D = 0.5 • ID25 Note 1
45
S
C
iss
9400
pF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
1280
pF
C
rss
460
pF
t
d(on)
45
ns
t
r
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 • ID25
60
ns
t
d(off)
R
G
= 1
Ω (External),
120
ns
t
f
45
ns
Q
g(on)
330
nC
Q
gs
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 • ID25
55
nC
Q
gd
155
nC
R
thJC
0.20
K/W
R
thCK
IXFK,IXFX
0.15
K/W
R
thCK
0.05
K/W
Source-Drain Diode
(T
J = 25°C, unless otherwise specified)
Characteristic Values
Symbol
Test Conditions
Min.
Typ. Max.
I
S
V
GS = 0
55
A
I
SM
Repetitive;
220
A
pulse width limited by T
JM
V
SD
I
F = 100 A, VGS = 0 V
Note 1
1.5
V
t
rr
250
ns
Q
RM
I
F = 25 A, -di/dt = 100 A/µs, VR = 100 V
1.0
µC
I
RM
10
A
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
miniBLOC (SOT-227B) Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46BSC
.215BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA Outline
Notes: 1. Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
IXFK55N50
IXFX55N50
IXFN55N50
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Terminals:
1 - Gate
2 - Collector
PLUS247 Outline


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