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IXFH8N80 Datasheet(PDF) 4 Page - IXYS Corporation |
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IXFH8N80 Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 4 page IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXFH8N80 IXFH9N80 W9TÃÃWy 11 0 1 0 0 D' ÃÃ 6 r
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8 8v U EÃ2Ã!$ P8 W 9TÃ2Ã#W ÃÃÃD9Ã2Ã#6 ÃÃÃDBÃ2Ã 6 sÃ2Ã HC "! U&Ã2Ã!$ 28 Ã Ã Ã 98 ' U EÃ2Ã !$ P8 TvtyrÃQyr 92 92! 92$ 92 92! 92$ QyrÃXvquÃÃTrpq S u -& ÃÃ F X Figure 7. Gate Charge Figure 8. Capacitance Curves Figure 9. Forward Voltage Drop of the Intrinsic Diode Figure 11. Transient Thermal Resistance Figure10. Forward Bias Safe Operating Area |
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