IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072 4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

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Figure 7. Gate Charge

Figure 8. Capacitance Curves

Figure 9. Forward Voltage Drop of the Intrinsic Diode

Figure 11. Transient Thermal Resistance

Figure10. Forward Bias Safe Operating Area