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KM416S1021CT-G7 Datasheet(PDF) 3 Page - Samsung semiconductor

Part # KM416S1021CT-G7
Description  512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416S1021CT-G7 Datasheet(HTML) 3 Page - Samsung semiconductor

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KM416S1021C
REV. 1. May '98
CMOS SDRAM
Preliminary
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Device supply voltage
VDD
VDDQ
-
3.6
V
1
Output supply voltage
VDDQ
3.0
3.3
3.6
V
1
3.26
3.43
3.6
V
8
Input reference voltage
VREF
1.3
1.5
1.7
V
2, 3
Termination voltage
Vtt
VREF-0.05
VREF
VREF+0.05
V
Input logic high voltage
VIH
VREF+0.2
-
VDD+0.3
V
1
Input logic low voltage
VIL
-0.3
0
VREF-0.2
V
2
Output logic high voltage
VOH
Vtt+0.8
-
-
V
5
Output logic low voltage
VOL
-
-
Vtt-0.8
V
5
Input leakage current
IIL
-5
-
5
uA
6
Output leakage current
IOL
-5
-
5
uA
7
1.Under all conditions, VDDQ must be less than or equal to VDD.
2. Typically, the value of VREF is expected to be about 0.45 * VDDQ of the transmitting device.
VREF is expected to track variations in VDDQ.
3. Peak to peak AC noise on VREF may not exceed 2% VREF (DC)
4. Vtt of transmitting device must track VREF of receiving device.
5. Voltage level measured at device pin with IOH/IOL = -16mA/16mA.
6. Any input 0V
≤ VIN ≤ VDD+0.3V, all other pins are not under test = 0V.
7. Dout buffer is disabled, 0V
≤ VOUT ≤ VDD.
8. Apply to only the KM416S1021CT-GS.
Notes :
CAPACITANCE (VDD = 3.3V, TA = 23
°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Parameter
Symbol
Min
Max
Unit
CLK, CKE, CS, RAS, CAS, WE & L(U)DQM
CIN
2
4
pF
Address
CADD
2
4
pF
DQ0 ~ DQ15
COUT
2
5
pF


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