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IS42S16128 Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc |
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IS42S16128 Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc |
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5 / 75 page  IS42S16128 ISSI® Integrated Silicon Solution, Inc. — 1-800-379-4774 5 Rev. A 03/13/00 DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.) Symbol Parameter Test Condition Speed Min. Max. Unit IIL Input Leakage Current 0V ≤ VIN ≤ VCC, with pins other than –10 10 µA the tested pin at 0V IOL Output Leakage Current Output is disabled –10 10 µA 0V ≤ VOUT ≤ VCC VOH Output High Voltage Level IOUT = –2 mA 2.4 — V VOL Output Low Voltage Level IOUT = +2 mA — 0.4 V ICC1 Operating Current(1,2) One Bank Operation, Burst Length=1 — 100 mA tRC ≥ tRC (min.), IOUT = 0mA ICC2P Precharge Standby Current CKE ≤ VIL (MAX)tCK = tCK (MIN) —— 3mA ICC2PS (In Power-Down Mode) tCK = ×— — 2mA ICC2N Precharge Standby Current CKE ≥ VIH (MIN)tCK = tCK (MIN) —— 30 mA ICC2NS (In Non Power-Down Mode) tCK = ×— — 15 mA ICC3P Active Standby Current CKE ≤ VIL (MAX)tCK = tCK (MIN) —— 3mA ICC3PS (In Power-Down Mode) tCK = ×— — 2mA ICC3N Active Standby Current CKE ≥ VIH (MIN)tCK = tCK (MIN) —— 30 mA ICC3NS (In Non Power-Down Mode) tCK = ×— — 15 mA ICC4 Operating Current tCK = tCK (MIN) CAS latency = 3 -8 — 160 mA (In Burst Mode)(1) IOUT = 0mA -10 — 160 mA -12 — 120 mA CAS latency = 2 -8 — 120 mA -10 — 120 mA -12 — 110 mA ICC5 Auto-Refresh Current tRC = tRC (MIN)-8 — 100 mA -10 — 100 mA -12 — 80 mA ICC6 Self-Refresh Current CKE ≤ 0.2V —— 2mA Notes: 1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vcc and GND for each memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents. 2. Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state. |
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