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VUB120-12NO2 Datasheet(PDF) 2 Page - IXYS Corporation

Part No. VUB120-12NO2
Description  Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
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Maker  IXYS [IXYS Corporation]
Homepage  http://www.ixys.com
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VUB120-12NO2 Datasheet(HTML) 2 Page - IXYS Corporation

   
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© 2004 IXYS All rights reserved
2 - 2
VUB 120 / 160
IXYS reserves the right to change limits, test conditions and dimensions.
I
R
V
R = VRRM,TVJ =
25°C
0.3
mA
V
R = VRRM,TVJ = 150°C
5
mA
V
F
I
F = 150 A,
T
VJ =
25°C
1.46
V
V
T0
For power-loss calculations only
0.87
V
r
T
T
VJ = 150°C
4.0
m
R
thJC
per diode
0.6 K/W
R
thCH
0.2
K/W
V
BR(CES)
V
GS = 0 V, IC = 1 mA
1200
V
V
GE(th)
I
C = 4 mA
4.5
6.5
V
I
CES
V
CE = 1200 V, TVJ =
25°C
0.2
mA
T
VJ = 125°C
1
mA
V
CEsat
V
GE = 15 V,
I
C = 50 A
VUB 120
2.1
V
I
C = 75 A
VUB 160
2.2
V
t
SC
V
GE = 15 V, VCE = 900 V, TVJ = 125°C,
10
µs
(SCSOA)
R
G = 15/10 Ω, non repetitive
RBSOA
V
GE = 15 V, VCE = 1200 V, TVJ = 125°C,
Clamped Inductive load, L = 100 µH
R
G = 15 Ω
VUB 120
150
A
R
G = 10 Ω
VUB 160
200
A
C
ies
V
CE = 25 V, f = 1 MHz, VGE = 0 V
VUB 120
5.7
nF
VUB 160
7.4
nF
t
d(on)
VUB 120
170
ns
t
d(on)
VUB 160
330
ns
t
d(off)
VUB 120
680
ns
t
d(off)
VUB 160
750
ns
E
on
VUB 120
11
mJ
VUB 160
12
mJ
E
off
VUB 120
8mJ
VUB 160
10
mJ
R
thJC
VUB 120
0.22 K/W
VUB 160
0.18 K/W
R
thCH
VUB 120
0.1
K/W
VUB 160
0.1
K/W
I
R
V
R = VRRM,TVJ =
25°C
0.5
mA
T
VJ = 125°C
0.75
1
mA
V
F
I
F = 30 A,
T
VJ =
25°C
2.7
V
V
T0
For power-loss calculations only
1.3
V
r
T
T
VJ = 150°C
15
m
I
RM
I
F = 50 A, -diF/dt = 100 A/µs, VR = 100 V
8
12
A
t
rr
I
F =
1 A, -di
F/dt = 100 A/µs, VR =
30 V
40
60
ns
R
thJC
0.9 K/W
R
thCH
0.3
K/W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE = 600 V, IC = 50/75 A
V
GE = 15 V, RG = 15/10 Ω
Inductive load; L = 100 µH
T
VJ = 125°C


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