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MPS6601 Datasheet(PDF) 2 Page - ON Semiconductor |
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MPS6601 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) MPS6601/6651 MPS6602/6652 V(BR)CEO 25 40 − − Vdc Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MPS6601/6651 MPS6602/6652 V(BR)CBO 25 40 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 − Vdc Collector Cutoff Current (VCE = 25 Vdc, IB = 0) MPS6601/6651 (VCE = 30 Vdc, IB = 0) MPS6602/6652 ICES − − 0.1 0.1 mAdc Collector Cutoff Current (VCB = 25 Vdc, IE = 0) MPS6601/6651 (VCB = 30 Vdc, IE = 0) MPS6602/6652 ICBO − − 0.1 0.1 mAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE 50 50 30 − − − − Collector −Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) VCE(sat) − 0.6 Vdc Base−Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.2 Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 100 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 30 pF SWITCHING CHARACTERISTICS Delay Time (VCC = 40 Vdc, IC = 500 mAdc, IB1 = 50 mAdc, tp w 300 ns Duty Cycle) td − 25 ns Rise Time tr − 30 ns Storage Time ts − 250 ns Fall Time tf − 50 ns |
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