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UNR32A7 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. UNR32A7
Description  Silicon NPN epitaxial planar transistor
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Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

UNR32A7 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Publication date: December 2002
SJH00065AED
Transistors with built-in Resistor
0.33
(0.40)
(0.40)
12
3
5
°
0.80±0.05
1.20±0.05
+0.05
–0.02
0.10
+0.05
–0.02
0.23
+0.05
–0.02
UNR32A7
Silicon NPN epitaxial planar transistor
For digital circuits
■ Features
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
■ Absolute Maximum Ratings T
a
= 25°C
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Unit: mm
Internal Connection
Marking Symbol: HE
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 050
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 050
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 50 V, I
E
= 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.01
mA
Forward current transfer ratio
hFE
VCE
= 10 V, I
C
= 5 mA
160
460
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 0.3 mA
0.25
V
Output voltage high level
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
V
Output voltage low level
VOL
VCC
= 5 V, V
B
= 2.5 V, R
L
= 1 kΩ
0.2
V
Input resistance
R1
−30%
22
+30%
k
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
■ Electrical Characteristics T
a
= 25°C ± 3°C
B
R1 (22 kΩ)
E
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
80
mA
Total power dissipation
PT
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.


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