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UNR32A7 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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UNR32A7 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 Publication date: December 2002 SJH00065AED Transistors with built-in Resistor 0.33 (0.40) (0.40) 12 3 5 ° 0.80±0.05 1.20±0.05 +0.05 –0.02 0.10 +0.05 –0.02 0.23 +0.05 –0.02 UNR32A7 Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption ■ Absolute Maximum Ratings T a = 25°C 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Unit: mm Internal Connection Marking Symbol: HE Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 050 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 050 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, I E = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.01 mA Forward current transfer ratio hFE VCE = 10 V, I C = 5 mA 160 460 Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.3 mA 0.25 V Output voltage high level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 V Output voltage low level VOL VCC = 5 V, V B = 2.5 V, R L = 1 kΩ 0.2 V Input resistance R1 −30% 22 +30% k Ω Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz ■ Electrical Characteristics T a = 25°C ± 3°C B R1 (22 kΩ) E C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 80 mA Total power dissipation PT 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. |
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