1

Publication date: December 2002

SJH00065AED

Transistors with built-in Resistor

0.33

(0.40)

(0.40)

12

3

5

°

+0.05

–0.02

0.10

+0.05

–0.02

0.23

+0.05

–0.02

UNR32A7

Silicon NPN epitaxial planar transistor

For digital circuits

■ Features

• Suitable for high-density mounting and downsizing of the equipment

• Contribute to low power consumption

■ Absolute Maximum Ratings T

a

= 25°C

1: Base

2: Emitter

3: Collector

SSSMini3-F1 Package

Unit: mm

Internal Connection

Marking Symbol: HE

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

Collector-emitter voltage (Base open)

V

Collector-base cutoff current (Emitter open)

= 50 V, I

E

= 0

0.1

µA

Collector-emitter cutoff current (Base open)

0.5

µA

Emitter-base cutoff current (Collector open)

0.01

mA

Forward current transfer ratio

= 10 V, I

C

= 5 mA

160

460



Collector-emitter saturation voltage

0.25

V

Output voltage high level

4.9

V

Output voltage low level

= 5 V, V

B

= 2.5 V, R

L

= 1 kΩ

0.2

V

Input resistance

−30%

22

+30%

k

Ω

Transition frequency

150

MHz

■ Electrical Characteristics T

a

= 25°C ± 3°C

B

E

C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

50

V

Collector-emitter voltage (Base open)

50

V

Collector current

80

mA

Total power dissipation

100

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.