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YFW2310 Datasheet(PDF) 2 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

Part No. YFW2310
Description  N-Channel MOSFET
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Maker  YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]
Homepage  http://www.yfwdiode.com/
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YFW2310 Datasheet(HTML) 2 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

   
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YFW2310 SOT-23
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www.yfwdiode.com
Dongguan YFW Electronics Co, Ltd.
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V (BR)DSS
VGS = 0V, ID =250µA
60
V
Zero gate voltage drain current
IDSS
VDS =60V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±20V, VDS = 0V
±100
nA
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
0.5
2
V
VGS =10V, ID =3A
105
mΩ
Drain-source on-resistance (note 3)
RDS(on)
VGS =4.5V, ID =3A
125
mΩ
Forward tranconductance (note 3)
gFS
VDS =15V, ID =2A
1.4
S
Diode forward voltage (note 3)
VSD
IS=3A, VGS = 0V
1.2
V
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
Ciss
247
pF
Output Capacitance
Coss
34
pF
Reverse Transfer Capacitance
Crss
VDS =30V,VGS =0V,f =1MHz
19.5
pF
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
td(on)
6
ns
Turn-on rise time
tr
15
ns
Turn-off delay time
td(off)
15
ns
Turn-off fall time
tf
VGS=10V,VDD=30V,
ID=1.5A,RGEN=1Ω
10
ns
Total Gate Charge
Qg
6
nC
Gate-Source Charge
Qgs
1
nC
Gate-Drain Charge
Qgd
VDS =30V,VGS =4.5V,ID =3A
1.3
nC
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.
4. Guaranteed by design, not subject to producting.
Electrical Characteristics Ta = 25℃


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