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YFW2102W Datasheet(PDF) 2 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

Part No. YFW2102W
Description  N-Channel MOSFET
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Maker  YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]
Homepage  http://www.yfwdiode.com/
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YFW2102W Datasheet(HTML) 2 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

   
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YFW2102W SOT-323
2 / 4
www.yfwdiode.com
Dongguan YFW Electronics Co, Ltd.
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =10µA
20
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =50µA
0.65
0.95
1.2
V
Gate-body leakage
IGSS
VDS =0V, VGS =±8V
±100
nA
Zero gate voltage drain current
IDSS
VDS =20V, VGS =0V
1
µA
VGS =4.5V, ID =3.6A
0.0
59
0.06
8
Drain-source on-resistance
1
RDS(on)
VGS =2.5V, ID =3.1A
0.070
0.115
Forward transconductance
1
gfs
VDS =5V, ID =3.6A
8
S
Diode forward voltage
VSD
IS=0.94A,VGS=0V
0.76
1.2
V
Dynamic Characteristics
Total gate charge
Qg
4.0
10
Gate-source charge
Qgs
0.65
Gate-drain charge
Qgd
VDS =10V,VGS =4.5V,ID =3.6A
1.5
nC
Input capacitance
2
Ciss
300
Output capacitance
2
Coss
120
Reverse transfer capacitance
2
Crss
VDS =10V,VGS =0V,f=1MHz
80
pF
Switching Characteristics
2
Turn-on delay time
td(on)
7
15
Rise time
tr
55
80
Turn-off delay time
td(off)
16
60
Fall time
tf
VDD=10V,
RL=5.5Ω, ID ≈3.6A,
VGEN=4.5V,Rg=6Ω
10
25
ns
Notes :
1.
Pulse Test : Pulse width≤300µs, duty cycle 2%.
2.
These parameters have no way to verify.
Electrical Characteristics Ta = 25℃


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