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UMSB30B Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

Part No. UMSB30B
Description  3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE
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Maker  YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]
Homepage  http://www.yfwdiode.com/
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UMSB30B Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

   
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UMSB30B THRU UMSB30M UMSB
1 / 3
www.yfwdiode.com
Dongguan YFW Electronics Co, Ltd.
3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE
RECTIFIER Reverse Voltage - 100 to 1000 V
Forward Current
– 3.0A
FEATURES
Fast reverse recovery time
Designed for Surface Mount Application
Glass Passivated Chip Junction
Low power loss, high efficiency
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: UMSB
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.234g / 0.00825oz
1.Input pin(-)
2.Input pin(+)
3.Output Anode(~)
4.Output Cathode(~)
UMSB
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Symbols
UMSB30B
UMSB30D UMSB30G UMSB30J UMSB30K UMSB30M
Units
Maximum Repetitive Peak Reverse Voltage
VRRM
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
100
200
400
600
800
1000
V
Average Rectified Output Current at Tc = 125 °C
Io
3.0
A
Peak Forward Surge Current 8.3 ms Single Half
Sine-Wave Superimposed on Rated Load(JEDEC
method)
IFSM
80
A
Forward Voltage per element at 3.0A
VF
1.0
1.4
1.6
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@
TA=25°C
IR
5.0
μA
@
TA=125°C
100
Typical Junction Capacitance
Note1
Cj
50
pF
Maximum Reverse Recovery Time
Note2
TRR
50
75
nS
Typical Thermal Resistance
Note3
RθJA
40
°C/W
Operating and Storage Temperature Range
Tj, Tstg
-55 ~ +150
°C
(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)Mounted on glass epoxy PC board with 4×1.5"×1.5"(3.81×3.81 cm) copper pad.


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