HMN1M8DV datasheet(4/9 Pages) HANBIT

Part #	HMN1M8DV

Description	Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 36Pin-DIP, 3.3V

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Manufacturer	HANBIT [Hanbit Electronics Co.,Ltd]

Direct Link	http://www.hbe.co.kr

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4 / 9 page

HANBit

HMN1M8DV

URL:www.hbe.co.kr

4

HANBit Electronics Co.,Ltd

Rev.0.0 (FEBRUARY/ 2002)

DC ELECTRICAL CHARACTERISTICS (TA= TOPR, VCCmin £ VCC≤ VCCmax )

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP.

MAX

UNIT

Input Leakage Current

VIN=VSS to VCC

ILI

-

±

3.0

mA

Output Leakage Current

/CE=VIH or /OE=VIH

or /WE=VIL

ILO

-

±

3.0

mA

Output high voltage

IOH=-1.0mA

VOH

2.4

-

V

Output low voltage

IOL= 2.0mA

VOL

-

0.4

V

Power-fail Deselect Voltage

Threshold

Select

Voltage

(THS = VSS )

VPFD

2.8

2.9

3.0

V

Standby supply current

/CE=2.2v

ISB

-

0.6

㎃

Standby supply current

/CE≥ VCC-0.2V,

0V≤ VIN≤ 0.2V,

or VIN≥ VCC-0.2V

ISB1

-

30

mA

Operating

Power

supply

current

/CE=VIL, II/O=0㎃ ,

VIN = VIL or VIH, Read

ICC

-

12

㎃

Supply switch-over voltage

VSO

-

2.5

-

V

CHARACTERISTICS (Test Conditions)

Note : Including scope and jig capacitance

PARAMETER

VALUE

Input pulse levels

0.4 to 2.2V

Input rise and fall times

5 ns

Input and output timing reference

levels

5V

( unless otherwise specified)

Output load (CL

1) =30pF+1TTL)

(CL

1) =100pF+1TTL)

See Figures

DOUT

+5V

1KΩ

1.9KΩ

5㎊

100㎊

Figure 1.

Output Load A

Figure 2.

Output Load B

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HMN1M8DV Datasheet(PDF) 4 Page - Hanbit Electronics Co.,Ltd

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