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IRG4IBC20FD Datasheet(PDF) 2 Page - International Rectifier

Part No. IRG4IBC20FD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRG4IBC20FD Datasheet(HTML) 2 Page - International Rectifier

 
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IRG4IBC20FD
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
27
40
IC = 9.0A
Qge
Gate - Emitter Charge (turn-on)
4.2
6.2
nC
VCC = 400V
See Fig. 8
Qgc
Gate - Collector Charge (turn-on)
9.9
15
VGE = 15V
td(on)
Turn-On Delay Time
43
TJ = 25°C
tr
Rise Time
20
ns
IC = 9.0A, VCC = 480V
td(off)
Turn-Off Delay Time
240
360
VGE = 15V, RG = 50
tf
Fall Time
150
220
Energy losses include "tail" and
Eon
Turn-On Switching Loss
0.25
diode reverse recovery.
Eoff
Turn-Off Switching Loss
0.64
mJ
See Fig. 9, 10, 18
Ets
Total Switching Loss
0.89
1.3
td(on)
Turn-On Delay Time
41
TJ = 150°C,
See Fig. 11, 18
tr
Rise Time
22
ns
IC = 9.0A, VCC = 480V
td(off)
Turn-Off Delay Time
320
VGE = 15V, RG = 50
tf
Fall Time
290
Energy losses include "tail" and
Ets
Total Switching Loss
1.35
mJ
diode reverse recovery.
LE
Internal Emitter Inductance
7.5
nH
Measured 5mm from package
Cies
Input Capacitance
540
VGE = 0V
Coes
Output Capacitance
37
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
7.0
—ƒ = 1.0MHz
trr
Diode Reverse Recovery Time
37
55
ns
TJ = 25°C
See Fig.
55
90
TJ = 125°C
14
IF = 8.0A
Irr
Diode Peak Reverse Recovery Current
3.5
5.0
A
TJ = 25°C
See Fig.
4.5
8.0
TJ = 125°C
15
VR = 200V
Qrr
Diode Reverse Recovery Charge
65
138
nC
TJ = 25°C
See Fig.
124
360
TJ = 125°C
16
di/dt = 200Aµs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
240
A/µs
TJ = 25°C
See Fig.
During tb
210
TJ = 125°C
17
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
S 600
——
VVGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.72
V/°CVGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
1.66
2.0
IC = 9.0A
VGE = 15V
2.06
VIC = 16A
See Fig. 2, 5
1.76
IC = 9.0A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
-11
mV/°CVCE = VGE, IC = 250µA
gfe
Forward Transconductance
T
2.9
5.1
SVCE = 100V, IC = 9.0A
ICES
Zero Gate Voltage Collector Current
——
250
µA
VGE = 0V, VCE = 600V
——
1700
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
1.4
1.7
V
IC = 8.0A
See Fig. 13
1.3
1.6
IC = 8.0A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
——
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)


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