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P2560BF-08ST Datasheet(PDF) 4 Page - Alliance Semiconductor Corporation |
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P2560BF-08ST Datasheet(HTML) 4 Page - Alliance Semiconductor Corporation |
4 / 7 page November 2003 P2560B rev 1.0 Low Frequency EMI Reduction 4 of 7 Notice: The information in this document is subject to change without notice. Absolute Maximum Ratings Symbol Parameter Rating Unit VDD, VIN Voltage on any pin with respect to GND -0.5 to +7.0 V TSTG Storage temperature -65 to +125 ° C TA Operating temperature 0 to +70 ° C DC Electrical Characteristics Symbol Parameter Min Typ Max Unit VIL Input low voltage GND - 0.3 – 0.8 V VIH Input high voltage 2.0 – VDD + 0.3 V IIL Input low current (pull-up resistor on inputs SR0 and SSON/SBM) – – -35 µA IIH Input high current – – 35 µA at 0.4 V, VDD = 3.3V – 3 – mA IXOL XOUT output low current at 0.4 V, VDD = 5.0 V – 20 – mA at 2.5 V, VDD = 3.3 V – 3 – mA IXOH XOUT output high current at 4.5 V, VDD = 5.0 V – 20 – mA VDD = 3.3 V, IOL = 20 mA – – 0.4 V VOL Output low voltage VDD = 5.0 V, IOL = 20 mA – – – V VDD = 3.3 V, IOL = 20 mA 2.5 – – V VOH Output high voltage VDD = 5.0 V, IOL = 20 mA 4.5 – – V IDD Static supply current standby mode – 0.6 – mA Normal mode: fIN-min fIN-typ fIN-max 3.3 V and 10 pF loading 3.2 – 7.0 mA ICC Dynamic supply current 5.0 V and 10 pF loading 6.2 – 13.6 mA VDD Operating voltage 2.7 3.3 5.5 V tON Power-up time (first locked cycle after power up) – 0.18 – mS ZOUT Clock output impedance – 50 – Ω AC Electrical Characteristics Symbol Parameter Min Typ Max Unit fIN Input frequency 20 – 32 MHz fOUT Output frequency 20 – 32 MHz Measured at 0.8 V to 2.0 V 0.7 0.9 1.1 ns tLH 1 Output rise time Measured at 1.2 V to 3.75 V – 0.75 – ns Measured at 2.0 V to 0.8 V 0.6 0.8 1.0 ns tHL 1 Output fall time Measured at 1.2 V to 3.75 V – 0.75 – ns tJC Jitter (cycle to cycle) – – 360 ps tD Output duty cycle 45 50 55 % |
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