AFGHL75T65SQDT datasheet(7/9 Pages) ONSEMI

Part #	AFGHL75T65SQDT

Description	Field Stop Trench IGBT 650 V, 75 A

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Manufacturer	ONSEMI [ON Semiconductor]

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AFGHL75T65SQDT

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7

TYPICAL CHARACTERISTICS (continued)

Figure 19. Stored Charge

Figure 20. Transient Thermal Impedance of IGBT

Figure 21. Transient Thermal Impedance of Diode

0

500

1000

1500

2000

2500

020

40

60

80

Forward Current, VF [V]

TC = 255C

T = 1755C

di/dt = 200A/uS

di/dt = 100A/uS

0.01

0.1

1

Rectangular Pulse Duration [sec]

Single Pulse

0.01

0.5

0.2

0.05

0.02

10−5

10−4

10−3

10 −2

10 −1

0.001

0.01

0.1

1

0.00001

1

10

Rectangular Pulse Duration [sec]

Single Pulse

0.01

0.5

0.2

0.05

0.02

C

0.1

10 0

10 1

P DM

1

t

t2

Duty Factor, D = t1/t2

j

c

Peak T = Pdm x Zthjc + T

P DM

1

t

t2

Duty Factor, D = t1/t2

j

c

Peak T = Pdm x Zthjc + T

10−5

10−4

10−3

10 −2

10 −1

10 0

10 1

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AFGHL75T65SQDT Datasheet(PDF) 7 Page - ON Semiconductor

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