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SDT02S60 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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SDT02S60 Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 8 page 2004-03-22 Rev. 2.0 Page 5 SDT02S60 SDT02S60 5 Typ. reverse current vs. reverse voltage IR=f(VR) 50 150 250 350 450 V 600 VR -3 10 -2 10 -1 10 0 10 1 10 2 10 µA 150°C 125°C 100°C 25°C 6 Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W SDT02S60 single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 7 Typ. capacitance vs. reverse voltage C= f(VR) parameter: TC = 25 °C, f = 1 MHz 10 1 10 2 10 3 V VR 0 2 4 6 8 10 12 14 16 18 20 22 pF 26 8 Typ. C stored energy EC=f(VR) 0 100 200 300 400 V 600 VR 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 µJ 1.2 |
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Similar Description - SDT02S60 |
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