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SDT02S60 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # SDT02S60
Description  Silicon Carbide Schottky Diode
Download  8 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SDT02S60 Datasheet(HTML) 4 Page - Infineon Technologies AG

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2004-03-22
Rev. 2.0
Page 4
SDT02S60
SDT02S60
1 Power dissipation
Ptot = f (TC)
0
20
40
60
80
100 120 140
°C 180
TC
0
2
4
6
8
10
12
W
16
2 Diode forward current
IF= f (TC)
parameter: Tj≤175 °C
0
20
40
60
80
100 120 140
°C 180
TC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
A
2.2
4 Typ. forward power dissipation vs.
average forward current
PF(AV)=f(IF) TC=100°C, d = tp/T
0
0.5
1
1.5
2
A
3
IF(AV)
0
1
2
3
4
5
W
7
d=0.1
d=0.2
d=0.5
d=1
3 Typ. forward characteristic
IF = f (VF)
parameter: Tj , tp = 350 µs
0
0.5
1
1.5
2
2.5
3
V
4
VF
0
0.5
1
1.5
2
2.5
3
A
4
150°C
100°C
25°C


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