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WSF3013 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSF3013
Description  N-Ch and P-Channel MOSFET
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF3013 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Rating
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
30
-
30
V
VGS
Gate-Source Voltage
±
20
±
20
V
ID
Continuous Drain Current,
VGS(NP)=10V,Ta=25℃
12*
-
11.5
A
Continuous Drain Current,
VGS(NP)=10V,Ta=70℃
7.5
-
9.6
A
48
-
48
A
20
20
mJ
9
-
9
A
PD
Total Power Dissipation
, Ta=25℃
5.25
5.25
W
TSTG
Storage Temperature Range
-55 to 1
75
-55 to 1
75
TJ
Operating Junction Temperature Range
175
175
60
60
/W
6.25
6.25
/W
BVDSS
RDSON
ID
30V
14mΩ
12A
-
30V
23mΩ
-
11.5A
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
General Description
Features
Applications
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
CCFL Back-light Inverter
Absolute Maximum Ratings
TO-252-4L Pin Configuration
Product Summery
The WSF3013 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The WSF3013 meet the RoHS and Green
Product requirement 100% EAS guaranteed
with full function reliability approved.
WSF3013
N-Ch and P-Channel MOSFET
Page 1
www.winsok.tw
Dec.2014
S1
G1
S2
G2
D1
D2
G1
S1
D1
(1)
(2)
(3)
G2
S2
D2
(3)
(5)
(4)
Avalanche Current, Single pulse
,
L=0.5mH
Avalanche Energy, Single pulse
,
L=0.5mH
Pulse Drain Current Tested
, VGS(NP)=10V
IDP
a
IAS
c
EAS
c
RqJA
b
Thermal Resistance-Junction to Ambient
,Steady State
RqJC
Thermal Resistance-Junction to Case
,Steady State
Note *:Max. current is limited by bonding wire.
Note a:Pulse width limited by max. junction temperature.
Note b:RqJA steady state t=999s. RθJA is measured with the device mounted on 1in
2, FR-4 board with 2oz. Copper.
Note c:UIS tested and pulse width limited by maximum junction temperature 175
oC (initial temperature Tj=25oC).


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