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WSD30140DN56 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSD30140DN56 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
2 / 6 page Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.02 --- V/℃ VGS=10V , ID= 20A --- RDS(ON) Static Drain-Source On-Resistance 2 VGS= 4.5V , ID=15A m Ω VGS(th) Gate Threshold Voltage 1.2 1. 7 2.5 V VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ --- --- 1 IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID= 20A --- 90 --- S Qg Total Gate Charge (4.5V) --- 26 --- Qgs Gate-Source Charge --- 9.5 --- Qgd Gate-Drain Charge VDS=15V , VGS=4.5V , ID= 20A --- 11.4 --- nC Td(on) Turn-On Delay Time --- 11 --- Tr Rise Time --- 6 --- Td(off) Turn-Off Delay Time --- 38.5 --- Tf Fall Time VDD=15V , VGEN=10V , RG= 3Ω, RL=0.75Ω. --- 10 --- ns Ciss Input Capacitance --- 3000 --- Coss Output Capacitance --- 1280 --- Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz --- 160 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 --- --- 85 A VG=VD=0V , Force Current VSD Diode Forward Voltage 2 VGS=0V , IS=A , TJ=25℃ --- --- 1.2 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics N-Ch MOSFET Page 2 www.winsok.tw Dec.2014 1. 7 2.4 2.5 3.3 WSD30140DN56 A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. |
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