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WSD30100DN56 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part No. WSD30100DN56
Description  N-Ch MOSFET
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Maker  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Homepage  http://www.winsok.tw/index.html
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WSD30100DN56 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.0213
---
V/℃
VGS=10V , ID=
20A
---
4
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V , ID=1
5A
---
6.2
m
Ω
VGS(th)
Gate Threshold Voltage
1.
5
1.
8
2.5
V
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
-5.73
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=30A
---
28
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.0
2.0
Ω
Qg
Total Gate Charge (4.5V)
---
9.2
Qgs
Gate-Source Charge
---
6
Qgd
Gate-Drain Charge
VDS=
15V , VGS=4.5V , ID=20A
---
2
nC
Td(on)
Turn-On Delay Time
---
14.3
Tr
Rise Time
---
26
Td(off)
Turn-Off Delay Time
---
24
Tf
Fall Time
VDD=1
2V , VGEN=10V ,
RG=
2.9Ω, ID=5.7A, RL=2.1Ω
---
4.4
ns
Ciss
Input Capacitance
---
1350
Coss
Output Capacitance
---
900
Crss
Reverse Transfer Capacitance
VDS=15V , VGS=0V , f=1MHz
---
65
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=30A
30
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
---
---
20
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
140
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=
20A , TJ=25℃
---
---
1
V
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper, t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=
30A
4.The power dissipation is limited by 175℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
Diode Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
N-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
4.6
3.
3
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WSD30100DN56


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