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WSD30100DN56 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part No. WSD30100DN56
Description  N-Ch MOSFET
Download  5 Pages
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Maker  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Homepage  http://www.winsok.tw/index.html
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WSD30100DN56 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

   
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Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Sou
rce Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
1
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
1
56
A
IDM
Pulsed Drain Current
2
A
EAS
Single Pulse Avalanche Energy
3
mJ
IAS
Avalanche Current
A
PD@TC=25℃
Total Power Dissipation
4
46.3
W
TSTG
Storage Temperature Range
-55 to 175
TJ
Operating Junction Temperature Range
-55 to 175
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-Ambient
1
---
/W
RθJC
Thermal Resistance Junction-Case
1
---
/W
BVDSS
RDSON
ID
30V
3.3mΩ
100A
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
General Description
Features
Applications
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
Absolute Maximum Ratings
Thermal Data
DFN5X6-8 Pin Configuration
N-Ch MOSFET
Page 1
www.winsok.tw
Dec.2014
Product Summery
45
100
140
30
50
2.7
The WSD30100DN56 is the highest performance
trench N-Ch MOSFET with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The WSD30100DN56 meet the RoHS and Green
Product requirement 100% EAS guaranteed with
full function reliability approved.
WSD30100DN56


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