HM8840Q datasheet(2/7 Pages) HMSEMI

Part #	HM8840Q

Description	Dual N-Channel Enhancement-Mode MOSFET

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Manufacturer	HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]

Direct Link	http://www.hmsemi.com/

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2.

Electrical Characteristics

(TJ=25℃ unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS (Note 2)

BVDSS

Drain-Source Breakdown Voltage

ID=250μA, VGS=0 V

20

V

IDSS

Drain to Source Leakage Current

VDS= 16V, VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=10V

10

μA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

0.3

0.65

1

V

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V, ID=10A

8.5

9.5

mΩ

DYNAMIC PARAMETERS

Ciss

Input Capacitance

VGS=0V, VDS=10V,

f=1MHz

1000

1255

1510

pF

Coss

Output Capacitance

150

220

290

pF

Crss

Reverse Transfer Capacitance

100

168

235

pF

SWITCHING PARAMETERS

Qg

Total Gate Charge

VGS=4.5V, VDS=10V,

ID=10A

10

12.5

15

nC

Qgs

Gate Source Charge

5.5

nC

Qgd

Gate Drain Charge

6.5

nC

td(on)

Turn-On Delay Time

VGEN=4.5V, VDD=10V,

RGEN=3Ω

1.1

ns

td(off)

Turn-Off Delay Time

7

ns

td(r)

Turn-On Rise Time

2.6

ns

td(f)

Turn-Off Fall Time

7.4

ns

Thermal Resistance

Symbol

Parameter

Typ

Max

Units

RθJC

Thermal Resistance Junction to Case(t≤10s)

30

40

℃

/W

HM

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HM8840Q Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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