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MJE4343 Datasheet(PDF) 3 Page - ON Semiconductor

Part No. MJE4343
Description  POWER TRANSISTORS COMPLEMENTARY SILICON
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE4343 Datasheet(HTML) 3 Page - ON Semiconductor

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MJE4343 MJE4353
3
Motorola Bipolar Power Transistor Device Data
5.0
IC, COLLECTOR CURRENT (AMP)
0.5
3.0
2.0
1.0
Figure 4. Turn–Off Time
0.7
0.2
0.5 0.7
5.0
2.0
0.3
1.0
3.0
20
10
7.0
TJ = 25°C
IC/IB = 10
IB1 = IB2
VCE = 30 V
ts
tf
2.0
0.2
IC, COLLECTOR CURRENT (AMP)
20
1.6
1.2
0.8
0.4
0
10
7.0
0.3
0.7
0.5
2.0
1.0
5.0
3.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
Figure 5. On Voltages
TYPICAL CHARACTERISTICS
1000
0.2
IC, COLLECTOR CURRENT (AMPS)
20
100
50
20
10
10
0.5
2.0
1.0
5.0
VCE = 2 V
Figure 6. MJE4340 Series (NPN)
TJ = 150°C
25
°C
–55
°C
1000
0.2
IC, COLLECTOR CURRENT (AMPS)
20
100
10
10
0.5
2.0
1.0
5.0
Figure 7. MJE4350 Series (PNP)
2.0
0.05
IB, BASE CURRENT (AMP)
5.0
1.2
0
3.0
0.1
0.3
0.2
0.5
Figure 8. Collector Saturation Region
1.6
0.8
0.4
0.07
0.7
1.0
2.0
TJ = 25°C
IC = 4.0 A
8.0 A
16 A
VCE = 2 V
TJ = 150°C
25
°C
–55
°C
VCE = 2 V
TJ = 150°C
25
°C
–55
°C
DC CURRENT GAIN


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