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MJE4343 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MJE4343
Description  POWER TRANSISTORS COMPLEMENTARY SILICON
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MJE4343 Datasheet(HTML) 2 Page - ON Semiconductor

   
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MJE4343 MJE4353
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
160
Vdc
Collector–Emitter Cutoff Current
(VCE = 80 Vdc, IB = 0)
ICEO
750
µAdc
Collector–Emitter Cutoff Current
(VCE = Rated VCB, VEB(off) = 1.5 Vdc)
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
1.0
5.0
mAdc
Collector–Base Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
750
µAdc
Emitter–Base Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 8.0 Adc, VCE = 2.0 Vdc)
(IC = 16 Adc, VCE = 4.0 Vdc)
hFE
15
8.0
35 (Typ)
15 (Typ)
Collector–Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 800 mA)
(IC = 16 Adc, IB = 2.0 Adc)
VCE(sat)
2.0
3.5
Vdc
Base–Emitter Saturation Voltage
(IC = 16 Adc, IB = 2.0 Adc)
VBE(sat)
3.9
Vdc
Base–Emitter On Voltage
(IC = 16 Adc, VCE = 4.0 Vdc)
VBE(on)
3.9
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
fT
1.0
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
800
pF
(1) Pulse Test: Pulse Width
v 300 µs, Duty Cycle w 2.0%.
(2) fT = hfe• ftest.
Figure 2. Switching Times Test Circuit
+11 V
25
µs
0
– 9.0 V
RB
–4 V
D1
SCOPE
VCC
+ 30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
3.0
IC, COLLECTOR CURRENT (AMP)
TJ = 25°C
IC/IB = 10
VCE = 30 V
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.2
0.5 0.7
5.0
2.0
1.0
3.0
20
Figure 3. Typical Turn–On Time
10
7.0
tr
0.3
Note: Reverse polarities to test PNP devices.
td @ VBE(off) = 5.0 V


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