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MJE4343 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. MJE4343
Description  POWER TRANSISTORS COMPLEMENTARY SILICON
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MJE4343 Datasheet(HTML) 1 Page - ON Semiconductor

   
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Motorola Bipolar Power Transistor Device Data
High-Voltage
High Power
Transistors
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
• High Collector–Emitter Sustaining Voltage —
NPN
PNP
VCEO(sus) = 160 Vdc — MJE4343 MJE4353
• High DC Current Gain — @ IC = 8.0 Adc
hFE = 35 (Typ)
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector–Emitter Voltage
VCEO
160
Vdc
Collector–Base Voltage
VCB
160
Vdc
Emitter–Base Voltage
VEB
7.0
Vdc
Collector Current — Continuous
Peak (1)
IC
16
20
Adc
Base Current — Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25_C
PD
125
Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.0
_C/W
(1) Pulse Test: Pulse Width
v 5.0 µs, Duty Cycle w 10%.
3.5
0
Figure 1. Power Derating
Reference: Ambient Temperature
TA, AMBIENT TEMPERATURE (°C)
25
50
100
125
3.0
2.5
0.5
75
150
1.0
1.5
2.0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE4343/D
© Motorola, Inc. 1998
MJE4343
MJE4353
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
160 VOLTS
NPN
PNP
CASE 340D–02
TO–218 TYPE


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