Electrical Characteristics

T

Symbol Description

Conditions

Min

Typ

Max

Units

DC Characteristics

BV

DSS

Drain-Source Breakdown

V

-20

V

Voltage

R

DS(ON)

Drain-Source On-Resistance

1

V

80

100

m

Ω

V

140

175

I

D(ON)

On-State Drain Current

1

V

-8

A

V

GS(th)

Gate Threshold Voltage

V

-0.6

V

I

GSS

Gate-Body Leakage Current

V

±100

nA

I

DSS

Drain Source Leakage Current

V

-1

µA

V

2

-5

g

fs

Forward Transconductance

1

V

4

S

Dynamic Characteristics

2

Q

G

Total Gate Charge

V

5.9

Q

GS

Gate-Source Charge

V

1

nC

Q

GD

Gate-Drain Charge

V

2

t

D(ON)

Turn-On Delay

V

22

t

R

Turn-On Rise Time

V

10

ns

t

D(OFF)

Turn-Off Delay

V

20

t

F

Turn-Off Fall Time

V

40

Source-Drain Diode Characteristics

V

SD

Source-Drain Forward

V

-1.3

V

Voltage

1

I

S

Continuous Diode Current

3

-0.6

A

AAT7551

20V P-Channel Power MOSFET

2

7551.2005.04.1.0

1. Pulse test: Pulse Width = 300µs.

2. Guaranteed by design. Not subject to production testing.

3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a