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MJE243 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MJE243
Description  POWER TRANSISTORS COMPLEMENTARY SILICON
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MJE243 Datasheet(HTML) 2 Page - ON Semiconductor

   
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MJE243 MJE253
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0)
VCEO(sus)
100
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCE = 100 Vdc, IE = 0, TC = 125_C)
ICBO
0.1
0.1
µAdc
Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)
IEBO
0.1
µAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
40
15
180
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
0.3
0.6
Vdc
Base–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 200 mAdc)
VBE(sat)
1.8
Vdc
Base–Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
40
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
50
pF
Figure 2. Switching Time Test Circuit
+11 V
25
µs
0
– 9.0 V
RB
– 4 V
D1
SCOPE
VCC
+ 30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
1K
IC, COLLECTOR CURRENT (AMPS)
VCC = 30 V
IC/IB = 10
TJ = 25°C
500
300
200
100
50
td
30
20
10
5
1
0.01
0.03 0.05
0.5
0.2
0.1
0.3
10
Figure 3. Turn–On Time
3
2
5
2
1
3
tr
NPN MJE243
PNP MJE253
0.02


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