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MJE243 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. MJE243
Description  POWER TRANSISTORS COMPLEMENTARY SILICON
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MJE243 Datasheet(HTML) 1 Page - ON Semiconductor

   
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Motorola Bipolar Power Transistor Device Data
Complementary Silicon Power
Plastic Transistors
. . . designed for low power audio amplifier and low–current, high–speed switching
applications.
• High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253
• High DC Current Gain @ IC = 200 mAdc
hFE = 40–200
hFE = 40–120 — MJE243, MJE253
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
• High Current Gain Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
100
Vdc
Collector–Base Voltage
VCB
100
Vdc
Emitter–Base Voltage
VEB
7.0
Vdc
Collector Current — Continuous
Peak
IC
4.0
8.0
Adc
Base Current
IB
10
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
15
0.12
Watts
W/ac
Total Power Dissipation @ TA = 25_C
Derate @ 25
_C
PD
1.5
0.012
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
8.34
_C/W
Thermal Resistance, Junction to Ambient
θJA
83.4
_C/W
16
20
Figure 1. Power Derating
T, TEMPERATURE (
°C)
0
40
60
100
120
160
12
1.6
0
1.2
8.0
0.8
4.0
0.4
80
140
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE243/D
© Motorola, Inc. 1995
MJE243
MJE253
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
100 VOLTS
15 WATTS
*Motorola Preferred Device
*
NPN
PNP
*
CASE 77–08
TO–225AA
REV 7


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