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7025E Datasheet(PDF) 5 Page - Maxwell Technologies

Part No. 7025E
Description  (8K x 16-Bit) Dual Port RAM High-Speed CMOS
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Maker  MAXWELL [Maxwell Technologies]
Homepage  http://www.maxwell.com
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7025E Datasheet(HTML) 5 Page - Maxwell Technologies

 
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All data sheets are subject to change without notice
©2002 Maxwell Technologies
All rights reserved.
(8K x 16-Bit) Dual Port RAM High-Speed CMOS
7025E
08.15.02 Rev 2
Chip Select to End of Write 1
-35
-45
t
SW
9, 10, 11
30
40
--
--
ns
Address Setup Time
-35
-45
t
AS
9, 10, 11
0
0
--
--
ns
Write Pulse Width
-35
-45
t
WP
9, 10, 11
30
35
--
--
ns
Write Recovery Time
-35
-45
t
WR
9, 10, 11
0
0
--
--
ns
Data Valid to End of Write
-35
-45
t
DW
9, 10, 11
25
25
--
--
ns
Output High Z Time 2,3
-35
-45
t
HZ
9, 10, 11
--
--
20
20
ns
Data Hold Time
-35
-45
t
DH
9, 10, 11
0
0
--
--
ns
Write Select to Output in High Z 2,3
-35
-45
t
WZ
9, 10, 11
--
--
20
20
ns
Output Active from End of Write 2,3,4
-35
-45
t
OW
9, 10, 11
0
0
--
--
ns
SEM Flag Write to Read Time
-35
-45
t
SWRD
10
10
--
--
ns
SEM Flag Contention Window
-35
-45
t
SPS
10
10
--
--
ns
1. To access RAM, CS = V
IL, UB or LB = VIL, SEM = VIH. To access semaphore, CS = VIN and SEM = VIL. Either condition must be
valid for the entire t
EW time.
2. Guaranteed by design.
3. Transition is measured ± 500 mV from low or high impedance voltage with load.
4. The specification for t
DH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH
and t
DW.
TABLE 8. 7025E AC ELECTRICAL CHARACTERISTICS FOR WRITE CYCLE
(V
CC = 5V ± 10%, VSS = 0V, TA = -55 TO 125
°
C)
PARAMETER
SYMBOL
SUBGROUPS
MIN
MAX
UNIT


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